j. c/ e.iizu tj 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 switchmode npn silicon power transistors the bux85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems. specifications features: ? vceo(sus) 450 v bux85 2 amperes power transistor npn silicon 450 volts 50 watts vces(sus) 1000v fall time = 0.3 u.s (typ) at = 1.0 a vce(sat) = 1.0 v (max) at tc = 1.0 a, ib = 0.2 a maximum ratings rating collector-emitter voltage collector-emitter voltage emitter base voltage collector current ? continuous ? peak(1) base current ? continuous ? peak(1) reverse base current ? peak total power dissipation @ tc = 25c derate above 25 c operating and storage junction temperature range symbol vceo(sus) vces vebo ic 'cm ib ibm ibm pd tj, tstg BUX84 400 800 bux85 450 1000 5 2 3.0 0.75 1.0 1 50 400 -65 to +150 unit vdc vdc vdc adc adc adc watts mw/c c style 1: pin1. base 2. collector 3. emitter 2 4. collector to-220ab thermal characteristics characteristic thermal resistance, junction to case thermal resistance, junction to ambient maximum lead temperature for soldering purpose: 1/8" from case for 5 seconds symbol rgjc rbja tl max 2.5 62.5 275 unit c/w c/w c (1) pulse test: pulse width = 5 ms, duty cycle 10%. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
bux85 electrical characteristics (tc = 25c unless otherwise noted) characteristic | symbol win | typ max unit off characteristics (1) collector-emitter sustaining voltage (lc = 100 madc, (l = 25 mh) see fig. 1 collector cutoff current (vces = rated value) (vces = rated value, tc = 125c) emitter cutoff current (veb = 5 vdc, ic = 0) vceo(sus) ices teo 450 ? ? ? ? ? ? 0.2 1.5 1 vdc madc madc on characteristics (1) dc current gain (ic = 0.1 adc,vce = 5v) collector-emitter saturation voltage (lc = 0.3 adc, ib = 30 madc) (ic = 1 adc, ib = 200 madc) base-emitter saturation voltage (ic = 1 adc, ib = 0.2 adc) hfe vce(sat) vbe(sat) 30 ? ? 50 ? ? ? 0.8 1 1.1 ? vdc vdc dynamic characteristics current-gain ? bandwidth product (ic = 500 madc, vce = 1 0 vdc, f = 1 mhz) fr 4 ? ? mhz switching characteristics turn-on time storage time fall time fall time vcc ~ 250 vdc, lc - 1 a ib1 =0.2 a, lb2 = 0.4a see fig. 2 same above cond. at tc = 95c ton % tf ?f ? ? ? ? 0.3 2 0.3 ? 0.5 3.5 ? 1.4 us us us us (1) pulse test: pw = 300 us, duty cycle 2%. bux85 package dimensions to-220ab t , seating -t-l plane style 1: pin1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. contholung dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim a b c d f g h j k l n 0 r s t u v f inches min 0.570 0.380 0.160 0.025 0.142 0.095 0.110 0.018 0.500 0.045 0.190 0.100 0.080 0.045 0.235 0.000 0.045 ? max 0.620 0.405 0.190 0.035 0.147 0.105 0.155 0.025 0.562 0.060 0.210 0.120 0.110 0.055 0.255 0.050 ? 0.080 millimeters min 14.48 9.66 4.07 0.64 3.61 2.42 2.80 0.46 12.70 1.15 4.83 2.54 2.04 1.15 5.97 0.00 1.15 ? max 15.75 10.28 4.82 0.88 3.73 2.66 3.93 0.64 14.27 1.52 5.33 3.04 2.79 1.39 6.47 1.27 ? 2.04
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